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Method for making a monolithic integrated high-t.sub.c superconductor-semiconductor structure
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2000 |
| Description | A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates. |
| File Size | 1260804 |
| File Format | |
| Language | English |
| Publisher Date | 2000-12-26 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Fabrication Patents Semiconductor Devices Circuits Semiconductors Materials Superconductors Materials Chips Electronics High Temperature Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
