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Degradation resistance of semiconductor electroluminescent devices
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1978 |
| Description | The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer. |
| File Size | 389212 |
| Page Count | 5 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080006895 |
| Archival Resource Key | ark:/13960/t78s9j043 |
| Language | English |
| Publisher Date | 1978-12-26 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Degradation Germanium Patents Electroluminescence Semiconductor Devices Zinc Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
