NDLI: Vertical bloch line memory (Document No: 20080004762)

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Vertical bloch line memory (Document No: 20080004762)

Content Provider	NASA Technical Reports Server (NTRS)
Copyright Year	1995
Description	A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.
File Size	1154844
Page Count	24
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_20080004762
Archival Resource Key	ark:/13960/t9q28v541
Language	English
Publisher Date	1995-07-25
Access Restriction	Open
Subject Keyword	Patents Bubble Memory Devices Hall Effect Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Patent

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