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Effect of mechanical stresses on characteristics of chip tantalum capacitors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Teverovsky, Alexander A. |
| Copyright Year | 2007 |
| Description | The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric. |
| File Size | 850566 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20070032910 |
| Archival Resource Key | ark:/13960/t1jh8hz3f |
| Language | English |
| Publisher Date | 2007-01-01 |
| Access Restriction | Open |
| Subject Keyword | Metals And Metallic Materials Axial Stress Leakage Electric Potential Capacitors Probability Theory Chips Mechanical Properties Degradation Thermodynamics Tantalum Hydrostatics Epoxy Resins Failure Analysis Curing Electric Current Alternating Current Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |