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1 ghz, 200 c, sic mesfet clapp oscillator
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Ponchak, George E. Schwartz, Zachary D. |
| Copyright Year | 2005 |
| Description | A SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent. |
| File Size | 228916 |
| Page Count | 3 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20050185107 |
| Archival Resource Key | ark:/13960/t5jb1465q |
| Language | English |
| Publisher Date | 2005-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Field Effect Transistors Capacitors Chips Frequencies Amplifiers High Temperature Inductors Oscillators Substrates Aluminum Oxides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
