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Atmospheric pressure spray chemical vapor deposited cuins2 thin films for photovoltaic applications
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Smith, M. A. Banger, K. K. Harris, J. D. Raffaelle, R. P. Hepp, A. F. Scheiman, D. A. |
| Copyright Year | 2002 |
| Description | Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination. |
| File Size | 704874 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20030000596 |
| Archival Resource Key | ark:/13960/t2f819m1s |
| Language | English |
| Publisher Date | 2002-10-01 |
| Access Restriction | Open |
| Subject Keyword | Spacecraft Propulsion And Power Solar Cells Schottky Diodes Scanning Electron Microscopy Annealing Atmospheric Pressure Disulfides Glass Sprayers Computerized Simulation Evaporation Thin Films Vapor Deposition Photovoltaic Cells Copper Sulfides Chemical Composition Argon Indium Sulfides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
