NDLI: Temperature effects in varactors and multipliers

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Temperature effects in varactors and multipliers

Content Provider	NASA Technical Reports Server (NTRS)
Author	East, J. Mehdi, Imran
Copyright Year	2001
Description	Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.
File Size	403476
Page Count	12
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_20020038963
Archival Resource Key	ark:/13960/t3wt3mx33
Language	English
Publisher Date	2001-12-01
Access Restriction	Open
Subject Keyword	Electronics And Electrical Engineering Temperature Dependence Gallium Arsenides Varactor Diodes Frequency Multipliers Computerized Simulation Monte Carlo Method Operating Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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