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Radiation effects on p+n inp junctions grown by mocvd
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Walters, Robert J. Summers, Geoffrey P. Messenger, Scott R. Panunto, M. J. |
| Copyright Year | 1994 |
| Description | The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells. |
| File Size | 561012 |
| Page Count | 14 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19950014104 |
| Archival Resource Key | ark:/13960/t0vq7vr2m |
| Language | English |
| Publisher Date | 1994-09-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Crystal Growth Radiation Effects Annealing Gallium Arsenides Silicon Alloys Doped Crystals Indium Phosphides Metalorganic Chemical Vapor Deposition Irradiation Spectroscopic Analysis Emitters P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
