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Surface passivation of inp solar cells with inalas layers
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Jain, Raj K. Flood, Dennis J. Landis, Geoffrey A. |
| Copyright Year | 1993 |
| Description | The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer. |
| File Size | 413901 |
| Page Count | 10 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19940006917 |
| Archival Resource Key | ark:/13960/t2c876s6v |
| Language | English |
| Publisher Date | 1993-05-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Solar Cells Conduction Bands Electromagnetic Absorption Recombination Reactions Indium Phosphides Windows Apertures Heterojunctions Indium Aluminum Arsenides Mathematical Models Minority Carriers Passivity P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
