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A new fabrication technique for back-to-back varactor diodes
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Grunthaner, Frank A. Martin, Suzanne Smith, R. Peter Liu, John K. Choudhury, Debabani Frerking, Margaret A. |
| Copyright Year | 1992 |
| Description | A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes. |
| File Size | 395198 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19930018550 |
| Archival Resource Key | ark:/13960/t93828n4g |
| Language | English |
| Publisher Date | 1992-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Leakage Schottky Diodes Electric Potential Varactor Diodes Capacitance-voltage Characteristics Laminates Fabrication Transmission Lines Semiconductors Materials Wafers Capacitance Low Frequencies Antenna Radiation Patterns Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
