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The effects of electron and proton radiation on gasb infrared solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Fraas, L. M. Gruenbaum, P. E. Avery, J. E. |
| Copyright Year | 1991 |
| Description | Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C). |
| File Size | 347715 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910020930 |
| Archival Resource Key | ark:/13960/t53f9nz5t |
| Language | English |
| Publisher Date | 1991-08-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Electric Potential Annealing Gallium Arsenides Gallium Antimonides Proton Damage Spectra Exposure Minority Carriers Electron Radiation Electron Irradiation Proton Irradiation Infrared Radiation Diffusion Length Electrons Low Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
