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Millimeter-wave monolithic diode-grid frequency multiplier
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1990 |
| Description | A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated. |
| File Size | 543242 |
| Page Count | 7 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910005238 |
| Archival Resource Key | ark:/13960/t3rv5g17k |
| Language | English |
| Publisher Date | 1990-09-04 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Phased Arrays Harmonic Generations Gallium Arsenides Doped Crystals Electronic Filters Frequency Multipliers Millimeter Waves Submillimeter Waves Semiconductor Diodes Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
