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High-temperature deformation and microstructural analysis for si3n4-sc2o3
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Cheong, Deock-Soo Sanders, William A. |
| Copyright Year | 1990 |
| Description | It was indicated that Si3N4 doped with Sc2O3 may exhibit high temperature mechanical properties superior to Si3N4 systems with various other oxide sintered additives. High temperature deformation of samples was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, such as Sc and O, exist in small amounts at very thin grain boundary layers and most of them stay in secondary phases at triple and multiple grain boundary junctions. These secondary phases are devitrified as crystalline Sc2Si2O7. Deformation of the samples was dominated by cavitational processes rather than movements of dislocations. Thus the excellent deformation resistance of the samples at high temperature can be attributed to the very small thickness of the grain boundary layers and the crystalline secondary phase. |
| File Size | 8711089 |
| Page Count | 25 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19900019424 |
| Archival Resource Key | ark:/13960/t02z64k2k |
| Language | English |
| Publisher Date | 1990-04-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Grain Boundaries Additives Deformation Doped Crystals Scandium Oxides Temperature Effects Sintering Silicon Nitrides High Temperature Microstructure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
