NDLI: Peeled film gaas solar cells for space power

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Peeled film gaas solar cells for space power

Content Provider	NASA Technical Reports Server (NTRS)
Author	Bailey, S. G. Brinker, D. J. Landis, G. A. Fatemi, N. S. Thomas, R. D. Deangelo, F. L. Wilt, D. M.
Copyright Year	1990
Description	Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.
File Size	403079
Page Count	10
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19900011971
Archival Resource Key	ark:/13960/t0sr3s906
Language	English
Publisher Date	1990-05-01
Access Restriction	Open
Subject Keyword	Electronics And Electrical Engineering Solar Cells Gallium Arsenides Life Durability Cost Reduction Planar Structures Spacecraft Power Supplies Etching Substrates Thin Films Fabrication Vapor Phase Epitaxy Aluminum Arsenides Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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