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Influence of the deposition conditions on radiofrequency magnetron sputtered mos2 films
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Steinmann, Pierre A. Spalvins Sr., Talivaldis |
| Copyright Year | 1990 |
| Description | By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates. |
| File Size | 1139438 |
| Page Count | 16 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19900011894 |
| Archival Resource Key | ark:/13960/t1gj4d514 |
| Language | English |
| Publisher Date | 1990-04-01 |
| Access Restriction | Open |
| Subject Keyword | Thin Films Electric Potential Stoichiometry Radio Frequencies Magnetron Sputtering Lubricants Bias Morphology Adhesion Deposition Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
