NDLI: High-power single spatial mode algaas channeled-substrate-planar semiconductor diode lasers for spaceborne communications

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High-power single spatial mode algaas channeled-substrate-planar semiconductor diode lasers for spaceborne communications

Content Provider	NASA Technical Reports Server (NTRS)
Author	Carlin, D. B. Ettenberg, M. Connolly, J. C.
Copyright Year	1989
Description	A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.
File Size	11094608
Page Count	96
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19890014489
Archival Resource Key	ark:/13960/t7np6zs15
Language	English
Publisher Date	1989-06-01
Access Restriction	Open
Subject Keyword	Lasers And Masers Aluminum Gallium Arsenides Laser Outputs Vapor Deposition Semiconductor Lasers High Power Lasers Gallium Arsenide Lasers Far Fields Laser Modes Electro-optics Substrates Quantum Electronics Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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