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Radiation resistance and comparative performance of ito/inp and n/p inp homojunction solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weinberg, I. Hart Jr., R. E. Swartz, C. K. Coutts, T. J. |
| Copyright Year | 1988 |
| Description | The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor. |
| File Size | 477355 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19890003448 |
| Archival Resource Key | ark:/13960/t2b90572q |
| Language | English |
| Publisher Date | 1988-09-30 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Solar Cells Radiation Effects Performance Tests Surface Reactions Indium Phosphides Conductivity Raman Spectroscopy Sputtering Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
