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Potential productivity benefits of float-zone versus czochralski crystal growth
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Abe, T. |
| Copyright Year | 1985 |
| Description | Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation. |
| File Size | 8501342 |
| Page Count | 25 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860010256 |
| Archival Resource Key | ark:/13960/t7fr4rs7n |
| Language | English |
| Publisher Date | 1985-08-15 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Productivity Single Crystals Crystal Defects Furnaces Dislocations Materials Float Zones Czochralski Method Silicon Steady State Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
