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Oxygen and carbon impurities and related defects in silicon
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Pearce, C. W. |
| Copyright Year | 1985 |
| Description | Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented. |
| File Size | 642803 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19850023318 |
| Archival Resource Key | ark:/13960/t71w0d13v |
| Language | English |
| Publisher Date | 1985-05-15 |
| Access Restriction | Open |
| Subject Keyword | Inorganic And Physical Chemistry Oxygen Crystal Defects Heat Treatment Nucleation Czochralski Method Precipitates Carbon Doped Crystals Impurities Precipitation Chemistry Temperature Effects Wafers Silicon Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
