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Bending strength studies on hot-pressed silicon carbide
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kriegesmann, J. |
| Copyright Year | 1984 |
| Description | The 4-point bending strength of 4 grades of hot-pressed SiC was determined at different temperatures. With a transgranular mode of fracture the values for bending strength are retained up to high temperatures. For intergranular fracture the decrease of strength is governed by subcritical crack growth. The intergranular fracture is caused by a high content of silicate glassy phase at the grain boundaries of hot-pressed SiC. |
| File Size | 1672259 |
| Page Count | 14 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19850004061 |
| Archival Resource Key | ark:/13960/t88h3g101 |
| Language | English |
| Publisher Date | 1984-08-01 |
| Access Restriction | Open |
| Subject Keyword | Structural Mechanics Grain Boundaries Stresses Hot Pressing Fracture Mechanics Thermal Resistance Silicon Carbides High Temperature Electron Microscopy Intergranular Corrosion Crack Propagation Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
