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Radiation damage
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weinberg, I. |
| Copyright Year | 1982 |
| Description | The radiation damage workshop considered a variety of topics among which were the need for equivalent electron fluences in gallium arsenide, the possibility of 15 percent end-of-life efficiencies for silicon, increasing radiation resistance in gallium arsenide, annealing of radiation damage and the need for radiation damage studies in cascade cells. The workshop members agreed that a high priority should be assigned to obtaining equivalent electron fluences for gallium arsenide cells. It was suggested that 1 MeV would be a reasonable electron energy for this purpose. Special care should be given to proton irradiations particularly for energies below 1 MeV. In addition, omnidirectional rather than normal incidence protons should be used. It was also agreed that there was a need for obtaining damage coefficients in gallium arsenide. In silicon, there is a requirement for additional flight data, especially in proton dominated orbits. These data are needed to further check the accuracy of the 1 MeV equivalence fluences. |
| File Size | 167877 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19830007566 |
| Archival Resource Key | ark:/13960/t9k40mk4x |
| Language | English |
| Publisher Date | 1982-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Radiation Effects Annealing Gallium Arsenides Heat Treatment Photovoltaic Cells Fluence Efficiency Silicon Radiation Damage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
