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Solid state microelectronics tolerant to radiation and high temperature. [jfet thick film hybrids
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Palmer, D. W. Draper, B. L. |
| Copyright Year | 1981 |
| Description | The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm. |
| File Size | 310024 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820007458 |
| Archival Resource Key | ark:/13960/t46q6s56x |
| Language | English |
| Publisher Date | 1981-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Radiation Hardening Hybrid Circuits Radiation Effects Annealing Field Effect Transistors Thick Films Microelectronics High Temperature Environments Diodes Electronic Equipment Tests Gamma Rays Radiation Tolerance Neutron Irradiation Nuclear Power Plants Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
