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Characterization and modeling of radiation effects nasa/msfc semiconductor devices
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kerns Jr., D. V. Cook Jr., K. B. |
| Copyright Year | 1978 |
| Description | A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested. |
| File Size | 17128482 |
| Page Count | 145 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810010839 |
| Archival Resource Key | ark:/13960/t07x1631z |
| Language | English |
| Publisher Date | 1978-12-01 |
| Access Restriction | Open |
| Subject Keyword | Communications And Radar Integrated Circuits Radiation Hardening Earth Orbital Environments Dosimeters Semiconductor Devices Irradiation Extraterrestrial Radiation Space Environment Simulation Spacecraft Electronic Equipment Cmos Radiation Damage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
