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Study of process technology for gaalas/gaas heteroface solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Walker, G. H. Almgren, D. W. Byvik, C. E. Conway, E. J. |
| Copyright Year | 1980 |
| Description | Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per cell was achieved with the advanced metal organic chemical vapor deposition process. Molecular beam epitaxy was limited by the slow growth rate. The lowest cost, an 18 percent efficient cell at air mass zero, was approximately $70 per watt. |
| File Size | 396405 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19810009022 |
| Archival Resource Key | ark:/13960/t1ck36s27 |
| Language | English |
| Publisher Date | 1980-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Gallium Arsenides Melting Epitaxy Energy Policy Fabrication Single Crystals Aluminum Gallium Arsenides Vapor Deposition Energy Technology Photovoltaic Cells Solar Energy Conversion Production Engineering Low Cost Cost Analysis Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
