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Modeling of thin, back-wall silicon solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Baraona, C. R. |
| Copyright Year | 1979 |
| Description | The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance. |
| File Size | 206598 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19790024479 |
| Archival Resource Key | ark:/13960/t9s22s988 |
| Language | English |
| Publisher Date | 1979-08-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Accelerated Life Tests Efficiency Performance Prediction Mathematical Models Radiation Damage P-n Junctions Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
