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Chemical vapor deposition reactor. [providing uniform film thickness
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Chern, S. S. |
| Copyright Year | 1977 |
| Description | An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials. |
| File Size | 508247 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19790020082 |
| Archival Resource Key | ark:/13960/t0fv3c657 |
| Language | English |
| Publisher Date | 1977-07-05 |
| Access Restriction | Open |
| Subject Keyword | Inorganic And Physical Chemistry Silanes Vapor Deposition Baffles Gas Flow Flow Velocity Chemical Reactors Film Thickness Substrates Gas Mixtures Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
