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Low cost amos solar cell development
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Stirn, R. J. |
| Copyright Year | 1975 |
| Description | Recent developments at JPL have demonstrated that high conversion efficiencies are found with GaAs metal semiconductor solar cells when a particular heat treatment processing step is used to introduce an interfacial layer between the metal and the semiconductor. The new cell, called AMOS (Antireflection-Coated Metal-Oxide-Semiconductor), has open circuit voltages of 0.68-0.72 volts and efficiencies of 15% under terrestrial sunlight, as compared to values of 0.45-0.48 volts and 10%, respectively, for similar cells without an interfacial layer. Potentially higher efficiencies are feasible as further improvements are made in optimizing the interfacial layer effect and in increasing the blue response of the cells. A thin film AMOS cell is proposed that uses a thin recrystallized germanium (Ge) layer between a low cost metal substrate and the vapor phase epitaxially (VPE)-grown GaAs. |
| File Size | 382760 |
| Page Count | 14 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19760005410 |
| Archival Resource Key | ark:/13960/t78s9hb3p |
| Language | English |
| Publisher Date | 1975-07-25 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Thin Films Solar Cells Gallium Arsenides Heat Treatment Semiconducting Films Metal Oxide Semiconductors Germanium Mis Semiconductors Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
