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Development of a (hg, cd)te photodiode detector, phase 2. [for 10.6 micron spectral region
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1972 |
| Description | High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices. |
| File Size | 1819085 |
| Page Count | 64 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19740002321 |
| Archival Resource Key | ark:/13960/t7qp0wk8c |
| Language | English |
| Publisher Date | 1972-08-01 |
| Access Restriction | Open |
| Subject Keyword | Infrared Detectors Life Durability Cadmium Tellurides Mercury Tellurides Minority Carriers Photodiodes P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
