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High-power microstrip rf switch
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Choi, S. D. |
| Copyright Year | 1971 |
| Description | A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented. |
| File Size | 658932 |
| Page Count | 15 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19720003204 |
| Archival Resource Key | ark:/13960/t95765s2v |
| Language | English |
| Publisher Date | 1971-10-01 |
| Access Restriction | Open |
| Subject Keyword | Electronic Equipment Radio Frequencies Ultrahigh Frequencies High Current Capacitors Spacecraft Communication Microstrip Devices Superhigh Frequencies Product Development Electric Switches Junction Diodes Radio Communication Standing Wave Ratios Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
