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Improved method of fabricating planar gallium arsenide diodes
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1969 |
| Description | Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N junctions. |
| File Size | 136575 |
| Page Count | 2 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19690000271 |
| Archival Resource Key | ark:/13960/t3gx9299w |
| Language | English |
| Publisher Date | 1969-08-01 |
| Access Restriction | Open |
| Subject Keyword | Electronic Components And Circuits Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |