NDLI: Structure, microstructure and disorder in low temperature chemical vapor deposited SiC coatings

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Structure, microstructure and disorder in low temperature chemical vapor deposited SiC coatings

Content Provider	Hyper Articles en Ligne (HAL)
Author	Plaisantin, H. Danet, J. Berdoyes, I. Laduye, G. Desenfant, A. Chollon, Georges
Copyright Year	2023
Abstract	Chemical vapor deposited SiC coatings were investigated at different scales by X-Ray diffraction, Raman microspectroscopy and transmission electron microscopy. They were prepared under specific conditions explaining the various (micro)structures obtained. The deposits all have a columnar morphology with a preferential orientation and a faulted cubic structure. They differ in how disorder is incorporated in the structure. Fine XRD analyses and stacking fault density assessment by TEM revealed the one-dimensionally-disordered (ODD) polytype in the textured coatings. The frequency and spatial distribution of stacking faults vary and sometimes locally generate periodic alpha sequences. A specific type of disorder was also identified where {111} planes are arranged parallel to the growth direction within the columns. These disorders, more energetic than stacking faults, induce multiple and particularly large Raman modes. Crystal distortions, such as dislocations, are localized at the ODD domain boundaries, which are frequently interrupted as they extend during the growth.
Related Links	https://hal.science/hal-04049617/file/CVD%20SiC_JECS_R1_Embedded_Unmarked.pdf
ISSN	09552219
e-ISSN	1873619X
DOI	10.1016/j.jeurceramsoc.2023.02.067
Journal	Journal of the European Ceramic Society
Issue Number	9
Volume Number	43
Language	English
Publisher	HAL CCSD Elsevier
Access Restriction	Open
Subject Keyword	Raman spectroscopy Transmission electron microscopy Silicon carbide Structure Chemical vapor deposition
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Materials Chemistry Chemical Engineering

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