NDLI: Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

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Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

Content Provider	Hyper Articles en Ligne (HAL)
Author	Bucamp, A. Coinon, Christophe Codron, J.-L. Troadec, David Wallart, X. Desplanque, L.
Copyright Year	2019
Abstract	We investigate the optical and electrical properties of InGaAs thin films and nanostructures grown directly on an InP semi-insulating substrate without any buffer layer using atomic hydrogen assisted molecular beam epitaxy. We confirm the positive influence of the atomic hydrogen flux during the deoxidization process as well as during the growth itself improving the photoluminescence properties of InGaAs quantum wells. We also study the effect of the atomic hydrogen flux on the electrical properties of buffer free undoped, Te or Si doped InGaAs epilayers. Eventually, we demonstrate that atomic hydrogen flux can be used to achieve InGaAs growth selectivity with respect to a SiO2 mask for a growth temperature as low as 470 °C and obtain in-plane InGaAs nanostructures on InP with good transport properties.
Related Links	https://hal.science/hal-02391386/file/S0022024819300582.pdf
ISSN	00220248
DOI	10.1016/j.jcrysgro.2019.01.033
Journal	Journal of Crystal Growth
Volume Number	512
Language	English
Publisher	HAL CCSD Elsevier
Publisher Date	2019-04-01
Access Restriction	Open
Subject Keyword	A3. Selective epitaxy B2. Semiconducting indium compounds A3. Molecular beam epitaxy A1. Nanostructures A3. Quantum wells Microelectronics Engineering Sciences [physics] Engineering Sciences [physics] Micro and nanotechnologies
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Materials Chemistry Condensed Matter Physics Inorganic Chemistry

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