Mixed Dimensional ZnO/WSe₂ Piezo-gated Transistor with Active Millinewton Force Sensing.

Content Provider	Europe PMC
Author	Geng, Yulin Xu, Jing Bin Che Mahzan, Muhammad Ammar Lomax, Peter Saleem, Muhammad Mubasher Mastropaolo, Enrico Cheung, Rebecca
Copyright Year	2022
Abstract	This work demonstratesa mixed-dimensional piezoelectric-gatedtransistor in the microscale that could be used as a millinewton forcesensor. The force-sensing transistor consists of 1D piezoelectriczinc oxide (ZnO) nanorods (NRs) as the gate control and multilayertungsten diselenide (WSe2) as the transistor channel. Theapplied mechanical force on piezoelectric NRs can induce a drain–sourcecurrent change (ΔIds) on the WSe2 channel. The different doping types of the WSe2 channel have been found to lead to different directions of ΔIds. The pressure from the calibration weightof 5 g has been observed to result in an ∼30% Ids change for ZnO NRs on the p-type doped WSe2 device and an ∼−10% Ids change for the device with an n-type doped WSe2. Theoutcome of this work would be useful for applications in future human–machineinterfaces and smart biomedical tools.
ISSN	19448244
Journal	ACS Applied Materials & Interfaces
Volume Number	14
PubMed Central reference number	PMC9634694
Issue Number	43
PubMed reference number	36259783
e-ISSN	19448252
DOI	10.1021/acsami.2c15730
Language	English
Publisher	American Chemical Society
Publisher Date	2022-10-19
Access Restriction	Open
Rights License	Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). © 2022 The Authors. Published by American Chemical Society
Subject Keyword	piezo-gated field-effect transistors forcesensors low dimensional materials ZnO nanorods 2Dmaterials piezoelectric effect
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Medicine Materials Science