NDLI: The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

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The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

Content Provider	Europe PMC
Author	Jiang, Changjun Wu, Lei Wei, WenWen Dong, Chunhui Yao, Jinli
Copyright Year	2014
Abstract	A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.PACS68.37.-d; 73.40.Rw; 73.61.-r
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	9
PubMed Central reference number	PMC4232846
Issue Number	1
PubMed reference number	25404869
e-ISSN	1556276X
DOI	10.1186/1556-276x-9-584
Language	English
Publisher	Springer
Publisher Date	2014-10-21
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. Copyright © 2014 Jiang et al.; licensee Springer.
Subject Keyword	Nanowire Thin film Electrochemical deposition Resistive random access memory
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science

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