NDLI: Unipolar resistive switching of ZnO-single-wire memristors.

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Unipolar resistive switching of ZnO-single-wire memristors.

Content Provider	Europe PMC
Author	Huang, Yong Luo, Ying Shen, Zihan Yuan, Guoliang Zeng, Haibo
Copyright Year	2014
Abstract	Well unipolar resistive switching (RS) behaviors were observed from Ag/ZnO single-microwire/Ag memristors. The reset voltages were larger than the set voltages, and all of them were less than 1 V. The resistance ratios of high-resistance state (HRS) to low-resistance state (LRS) reached 103. The bistable RS behaviors were entirely reversible and steady within 100 cycles. It was found that the dominant conduction mechanisms in LRS and HRS were ohmic behavior and space-charge-limited current (SCLC), respectively.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	9
PubMed Central reference number	PMC4136945
Issue Number	1
PubMed reference number	25147487
e-ISSN	1556276X
DOI	10.1186/1556-276x-9-381
Language	English
Publisher	Springer
Publisher Date	2014-08-07
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. Copyright © 2014 Huang et al.; licensee Springer.
Subject Keyword	ZnO Resistive random access memory (RRAM) Resistive switching (RS) Electrical properties
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science

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