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Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition.
| Content Provider | Europe PMC |
|---|---|
| Author | Han, Ning Wang, Fengyun Yang, Zaixing Yip, SenPo Dong, Guofa Lin, Hao Fang, Ming Hung, TakFu Ho, Johnny C |
| Copyright Year | 2014 |
| Abstract | Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga2O3 nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga2O3 nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 107 Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga2O3 materials in this III-V nanowire-compatible growth condition.PACS77.55.D; 61.46.Km; 78.40.Fy |
| ISSN | 19317573 |
| Journal | Nanoscale Research Letters |
| Volume Number | 9 |
| PubMed Central reference number | PMC4105120 |
| Issue Number | 1 |
| PubMed reference number | 25114641 |
| e-ISSN | 1556276X |
| DOI | 10.1186/1556-276x-9-347 |
| Language | English |
| Publisher | Springer |
| Publisher Date | 2014-07-10 |
| Access Restriction | Open |
| Rights License | This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. Copyright © 2014 Han et al.; licensee Springer. |
| Subject Keyword | β-Ga2O3 nanowires Chemical vapor deposition Solid-source Highly crystalline Large resistance Dielectric |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics Materials Science |
