Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm).

Content Provider	Europe PMC
Author	Samanta, Sudeshna Das, Kaustuv Raychaudhuri, Arup Kumar
Copyright Year	2013
Abstract	Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/fα. Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/f spectral power density.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	8
PubMed Central reference number	PMC3648426
Issue Number	1
PubMed reference number	23574820
e-ISSN	1556276X
DOI	10.1186/1556-276x-8-165
Language	English
Publisher	Springer
Publisher Date	2013-04-10
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2013 Samanta et al.; licensee Springer.
Subject Keyword	Flicker noise MSM device Single Si NW
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science