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Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask.

Content Provider	Europe PMC
Author	Gianneta, Violetta Olziersky, Antonis Nassiopoulou, Androula G
Copyright Year	2013
Abstract	AbstractWe report on Si nanopatterning through an on-chip self-assembled porous anodic alumina (PAA) masking layer using reactive ion etching based on fluorine chemistry. Three different gases/gas mixtures were investigated: pure SF6, SF6/O2, and SF6/CHF3. For the first time, a systematic investigation of the etch rate and process anisotropy was performed. It was found that in all cases, the etch rate through the PAA mask was 2 to 3 times lower than that on non-masked areas. With SF6, the etching process is, as expected, isotropic. By the addition of O2, the etch rate does not significantly change, while anisotropy is slightly improved. The lowest etch rate and the best anisotropy were obtained with the SF6/CHF3 gas mixture. The pattern of the hexagonally arranged pores of the alumina film is, in this case, perfectly transferred to the Si surface. This is possible both on large areas and on restricted pre-defined areas on the Si wafer.PACS78.67.Rb, 81.07.-b, 61.46.-w
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	8
PubMed Central reference number	PMC3605172
Issue Number	1
PubMed reference number	23402551
e-ISSN	1556276X
DOI	10.1186/1556-276x-8-71
Language	English
Publisher	Springer
Publisher Date	2013-02-12
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2013 Gianneta et al; licensee Springer.
Subject Keyword	Porous anodic alumina Si nanopatterning Reactive ion etching Fluorine chemistry
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science

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