Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

Content Provider	Europe PMC
Author	Zhong, Aihua Hane, Kazuhiro
Copyright Year	2012
Abstract	GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3564710
Issue Number	1
PubMed reference number	23270331
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-686
Language	English
Publisher	Springer
Publisher Date	2012-12-27
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Zhong and Hane; licensee Springer.
Subject Keyword	GaN nanowall network GaN growth on Si substrate Porous GaN Hall measurement N/Ga ratio TEM
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science