In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

Content Provider	Europe PMC
Author	Kim, Tae-Youb Huh, Chul Park, Nae-Man Choi, Cheol-Jong Suemitsu, Maki
Copyright Year	2012
Abstract	Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3534491
Issue Number	1
PubMed reference number	23171576
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-634
Language	English
Publisher	Springer
Publisher Date	2012-11-21
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Kim et al.; licensee Springer.
Subject Keyword	Silicon nanocrystals in situ-formed Si-NCs Silicon carbide-based films Hexagonal silicon phase structure
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science