Investigation of electronic properties of graphene/Si field-effect transistor.

Content Provider	Europe PMC
Author	Ma, Xiying Gu, Weixia Shen, Jiaoyan Tang, Yunhai
Copyright Year	2012
Abstract	We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the graphene transistor show significant current saturation, and the graphene transistor can be modulated using the local graphene gate. These results clearly show that the device is well suited for analog applications.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3533520
Issue Number	1
PubMed reference number	23244050
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-677
Language	English
Publisher	Springer
Publisher Date	2012-12-17
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Ma et al.; licensee Springer.
Subject Keyword	Graphene/Si field-effect transistor CVD Current saturation Local graphene gate
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science