Evidence for formation of multi-quantum dots in hydrogenated graphene.

Content Provider	Europe PMC
Author	Chuang, Chiashain Puddy, Reuben K Connolly, Malcolm R Lo, Shun-Tsung Lin, Huang-De Chen, Tse-Ming Smith, Charles G Liang, Chi-Te
Copyright Year	2012
Abstract	We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called ‘stochastic Coulomb blockade’. A possible explanation for the formation of the multi-quantum dots, which is not observed in pristine graphene to date, was attributed to the impurities and defects unintentionally decorated on a single-layer graphene flake which was not treated with the thermal annealing process. Graphene multi-quantum dots developed around impurities and defect sites during the hydrogen plasma exposure process.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3526389
Issue Number	1
PubMed reference number	22898058
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-459
Language	English
Publisher	Springer
Publisher Date	2012-08-16
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Chuang et al.; licensee Springer.
Subject Keyword	Multi-quantum dots Single-layer graphene flake Coulomb peaks
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science