Nanoscale electrical property studies of individual GeSi quantum rings by conductive scanning probe microscopy.

Content Provider	Europe PMC
Author	Lv, Yi Cui, Jian Jiang, Zuimin M Yang, Xinju
Copyright Year	2012
Abstract	The nanoscale electrical properties of individual self-assembled GeSi quantum rings (QRs) were studied by scanning probe microscopy-based techniques. The surface potential distributions of individual GeSi QRs are obtained by scanning Kelvin microscopy (SKM). Ring-shaped work function distributions are observed, presenting that the QRs' rim has a larger work function than the QRs' central hole. By combining the SKM results with those obtained by conductive atomic force microscopy and scanning capacitance microscopy, the correlations between the surface potential, conductance, and carrier density distributions are revealed, and a possible interpretation for the QRs' conductance distributions is suggested.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3524759
Issue Number	1
PubMed reference number	23194252
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-659
Language	English
Publisher	Springer
Publisher Date	2012-11-29
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Lv et al.; licensee Springer.
Subject Keyword	GeSi quantum rings (QRs) electrical properties SKM CAFM SCM
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science