Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.

Content Provider	Europe PMC
Author	Ungan, Fatih Yesilgul, Unal Şakiroğlu, Serpil Kasapoglu, Esin Erol, Ayse Arikan, Mehmet Cetin Sarı, Huseyin Sökmen, Ismail
Copyright Year	2012
Abstract	Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 − xNyAs1 − y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 − xInxNyAs1 − y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3512540
Issue Number	1
PubMed reference number	23113959
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-606
Language	English
Publisher	Springer
Publisher Date	2012-10-31
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Ungan et al.; licensee Springer.
Subject Keyword	Double quantum well Intense laser field Dilute nitride
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science