Theoretical luminescence spectra in p-type superlattices based on InGaAsN.

Content Provider	Europe PMC
Author	de Oliveira, Thiago F Rodrigues, Sara CP Scolfaro, Luísa MR Sipahi, Guilherme M da Silva, Eronides F
Copyright Year	2012
Abstract	In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent k→p→ method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3507797
Issue Number	1
PubMed reference number	23113975
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-607
Language	English
Publisher	Springer
Publisher Date	2012-10-31
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 de Oliveira et al.; licensee Springer.
Subject Keyword	Dilute nitride semiconductor Luminescence k→p→ method p-doped Nanostructures
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science