Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

Content Provider	Europe PMC
Author	Tong, Cunzhu Yoon, Soon Fatt Wang, Lijun
Copyright Year	2012
Abstract	We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3502451
Issue Number	1
PubMed reference number	23006618
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-520
Language	English
Publisher	Springer
Publisher Date	2012-09-24
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Tong et al.; licensee Springer.
Subject Keyword	Quantum rings Self-assemble Quantum size effect Surface diffusion
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science