Controlled synthesis of bilayer graphene on nickel.

Content Provider	Europe PMC
Author	Umair, Ahmad Raza, Hassan
Copyright Year	2012
Abstract	We report a uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We used atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1,000°C. The optimized process parameters, i.e., growth time, annealing profile and flow rates of various gases, are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the range of 0.9 to 1.6 over 96% of the 200 μm × 200 μm area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3479054
Issue Number	1
PubMed reference number	22863171
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-437
Language	English
Publisher	Springer
Publisher Date	2012-08-06
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Umair and Raza; licensee Springer.
Subject Keyword	Bilayer graphene Chemical vapor deposition Raman spectroscopy
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science