High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Content Provider	Europe PMC
Author	Chen, Szu-Hung Liao, Wen-Shiang Yang, Hsin-Chia Wang, Shea-Jue Liaw, Yue-Gie Wang, Hao Gu, Haoshuang Wang, Mu-Chun
Copyright Year	2012
Abstract	A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3466142
Issue Number	1
PubMed reference number	22853458
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-431
Language	English
Publisher	Springer
Publisher Date	2012-08-01
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Chen et al.; licensee Springer.
Subject Keyword	GaAs High-k MOSFET Three-dimensional device FinFET
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science