Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy.

Content Provider	Europe PMC
Author	Zhang, Yifei Ye, Fengfeng Lin, Jianhui Jiang, Zuimin Yang, Xinju
Copyright Year	2012
Abstract	The conductive properties of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy on single-layer (SL) and bi-layer (BL) GeSi QDs with different dot densities at room temperature. By comparing their average currents, it is found that the BL and high-density QDs are more conductive than the SL and low-density QDs with similar sizes, respectively, indicating the existence of both vertical and lateral couplings between GeSi QDs at room temperature. On the other hand, the average current of the BL QDs increases much faster with the bias voltage than that of the SL QDs does. Our results suggest that the QDs’ conductive properties can be greatly regulated by the coupling effects and bias voltages, which are valuable for potential applications.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3463465
Issue Number	1
PubMed reference number	22650414
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-278
Language	English
Publisher	Springer
Publisher Date	2012-05-31
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Zhang et al.; licensee Springer.
Subject Keyword	Conductance Conductive atomic force microscopy GeSi quantum dots Coupling
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science