Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition.

Content Provider	Europe PMC
Author	Miao, Guoqing Zhang, Dengwei
Copyright Year	2012
Abstract	Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with <111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3413516
Issue Number	1
PubMed reference number	22716780
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-321
Language	English
Publisher	Springer
Publisher Date	2012-06-20
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Miao and Zhang et al.; licensee Springer.
Subject Keyword	InP nanowire catalyst-free growth MOCVD photoluminescence Raman
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science